晶圆焊垫的化镀镍凸块结构及其制造方法

Electroless-nickel-bump structure of wafer die pads and manufacturing method thereof

Abstract

Disclosed is an electroless-nickel-bump structure of wafer die pads and a manufacturing method thereof. The electroless-nickel-bump structure of the wafer die pads includes a wafer, wherein the wafer includes a surface, a plurality of die pads arranged on the surface and a protective layer which is formed on the surface and provided with a plurality of openings for exposing the plurality of die pads correspondingly; a plurality of catalyst layers, wherein under-bump metallization or zinc treatment is used to form a catalyst layer on each of the surfaces of the plurality of die pads; a plurality of electroless nickel bumps, wherein under a state that a photoresist is arranged, an electroless nickel method is used to form a bump of a preset height, comprised of the electroless nickel, at each catalyst layer; a plurality of external protective layers, wherein two separated manufacturing processes or the same manufacturing process, which are selected from ethnic groups of a gold-immersion production and a silver-immersion process so as to form an external protective layer on each of the top surfaces or the surrounding side faces of the plurality of bumps separately or simultaneously so that the exposed surfaces of the eletroless nickel bumps are completely wrapped; and thus the top-face hardness of the eletroless nickel bumps is improved and reduced and a problem that the side walls of the electroless nickel bumps are easy to oxidize or disadvantages that short circuits among the bumps are likely to happen because of electron transference are prevented.
一种晶圆焊垫的化镀镍凸块结构及其制造方法,包括:一晶圆,包含一表面、多个焊垫设在表面及一保护层形成于表面上并设有多个开口供对应显露多个焊垫;多个触媒层,利用凸块下金属化或锌化处理以在多个焊垫的表面上各形成一触媒层;多个化镀镍凸块,在设有光阻的状态下,利用无电解镍方式以在触媒层上各形成一预设高度以无电解镍构成的凸块;及多个外护层,利用选自化金制作过程、化银制作过程的族群中两个分开制作过程或同一制作过程,以在多个凸块的顶面及环侧面分开地或同时地各形成一外护层以完全包覆化镀镍凸块的外露表面;由此改良并降低化镀镍凸块的顶面硬度,避免化镀镍凸块的侧壁容易氧化的问题或因电子迁移而易造成凸块之间短路的缺点。

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