Multi-grid field effect transistor and manufacturing technology thereof



The invention discloses a multi-grid field effect transistor and a manufacturing technology of the multi-grid field effect transistor. The multi-grid field effect transistor comprises a substrate, a dielectric layer and at least one fin-shaped structure, wherein the substrate is provided with a first area and a second area, the dielectric layer is only located in the substrate in the first area, and the at least one fin-shaped structure is located on the dielectric layer. In addition, the invention further provides the multi-grid field effect transistor manufacturing technology used for forming the multi-grid field effect transistor.




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