Multi-grid field effect transistor and manufacturing technology thereof

多栅极场效晶体管及其制作工艺

Abstract

The invention discloses a multi-grid field effect transistor and a manufacturing technology of the multi-grid field effect transistor. The multi-grid field effect transistor comprises a substrate, a dielectric layer and at least one fin-shaped structure, wherein the substrate is provided with a first area and a second area, the dielectric layer is only located in the substrate in the first area, and the at least one fin-shaped structure is located on the dielectric layer. In addition, the invention further provides the multi-grid field effect transistor manufacturing technology used for forming the multi-grid field effect transistor.
本发明公开一种多栅极场效晶体管及其制作工艺,包含有一基底、一介电层以及至少一鳍状结构。基底具有一第一区以及一第二区。介电层仅位于第一区中的基底中。至少一鳍状结构位于介电层上。此外,本发明也提供一种多栅极场效晶体管制作工艺用以形成前述的多栅极场效晶体管。

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