Self-alignment duplex patterning method

自对准双重图形化方法

Abstract

The invention provides a self-alignment duplex patterning method. The method comprises the following steps: providing a material layer to be etched, forming a sacrificial photoresist layer on the material layer to be etched, curing photoresist at the top and side wall of the sacrificial photoresist layer to form a cured photoresist casing, performing back-etching on the cured photoresist casing at the top of the sacrificial photoresist layer until an uncured inner sacrificial photoresist layer is exposed, forming a first mask pattern on the cured photoresist casing on the side wall of the inner sacrificial photoresist layer, and removing the uncured inner sacrificial photoresist layer. As a hard mask layer is not required to form, the process procedures are reduced, and the impact of the stress generated by the hard mask layer on the profile of the sacrificial photoresist layer is eliminated. Besides, the first mask pattern is formed by removing the top of the cured photoresist casing, the side wall of the sacrificial photoresist layer formed by the photolithographic process is smooth and perpendicular to the surface of the material layer to be etched, and the side wall of the finally-formed etched pattern has a better profile.
一种自对准双重图形化方法,包括:提供待刻蚀材料层;在所述待刻蚀材料层上形成牺牲光刻胶层;将所述牺牲光刻胶层中顶部和侧壁的光刻胶进行固化形成固化光刻胶外壳;对所述牺牲光刻胶层顶部的固化光刻胶外壳进行回刻蚀,直到暴露出未固化的内部牺牲光刻胶层,位于内部牺牲光刻胶层侧壁的固化光刻胶外壳形成第一掩膜图形;去除所述未固化的内部牺牲光刻胶层。由于不需要形成硬掩膜层,减少了工艺步骤,不会因为所述硬掩膜层产生的应力对牺牲光刻胶层的形貌造成影响,且所述第一掩膜图形是通过将固化光刻胶外壳的顶部去除后形成的,通过光刻工艺形成的牺牲光刻胶层的侧壁光滑且垂直于待刻蚀材料层表面,最终形成的刻蚀图形的侧壁形貌较佳。

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    CN-103985629-AAugust 13, 2014上海华力微电子有限公司Manufacturing method of self-aligned two-layer graph semiconductor structure
    CN-103985629-BJuly 11, 2017上海华力微电子有限公司自对准双层图形半导体结构的制作方法