Inverted high-voltage light-emitting diode and manufacturing method thereof

倒装高压发光二极管及其制作方法

Abstract

一种倒装高压发光二极管,包括LED芯片和支撑基板;所述LED芯片包含多个LED芯片单元,所述每个LED芯片倒装焊接在支撑基板上;所述每个LED芯片单元包含n型半导体层、p型半导体层、有源层、p电极焊盘和n电极焊盘;其中所述n电极焊盘包含电互连的三部分:位于n型半导体层表面的n接触电极部分;位于台面侧壁上的连接部分,所述连接部分仅覆盖部分台面侧壁,并通过绝缘层与台面侧壁电隔离;和延伸到p型半导体层上方的焊接部分,所述焊接部分与p型半导体层和p电极焊盘电隔离,所述焊接部分用于与支撑基板上的互连焊盘焊接。本发明用于解决倒装安装过程中由于接触面积小而导致的可靠性差的问题,并可提高芯片有源区的利用率。
An inverted high-voltage light-emitting diode comprises an LED chip and a supporting substrate. The LED chip comprises a plurality of LED chip units, and each LED chip unit is welded to the supporting substrate in an inverted mode. Each LED chip unit comprises an n-type semiconductor layer, a p-type semiconductor layer, an active layer, a p electrode bonding pad and an n electrode bonding pad. The n electrode bonding pad comprises three electrified connected parts which are an n contact electrode part located on the surface of the n-type semiconductor layer, a connecting part located on the side wall of a table board and a welding part extending to the position above the p-type semiconductor layer, wherein only part of the side wall of the table board is covered with the connecting part, and the connecting part is electrically isolated from the side wall of the table board through an insulating layer; the welding part is electrically isolated from the p-type semiconductor layer and the p electrode bonding pad, and the welding part is used for being welded to the connected bonding pads on the supporting substrate. The inverted high-voltage light-emitting diode is used for solving the problem that in the inverted mounting process, because the contact area is small, the reliability is poor, and the utilization rate of an active area of the chip can be increased.

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Cited By (6)

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    CN-104465921-AMarch 25, 2015中国科学院半导体研究所Light emitting diode integrated chip of capacitive structure and manufacturing method of light emitting diode integrated chip
    CN-104465921-BJune 20, 2017中国科学院半导体研究所电容式结构的发光二极管集成芯片及其制备方法
    CN-104810440-AJuly 29, 2015杭州士兰明芯科技有限公司一种倒装led芯片及其制作方法
    CN-104953002-ASeptember 30, 2015江苏汉莱科技有限公司一种高压倒装led芯片及其制作方法
    CN-105742465-AJuly 06, 2016深圳大道半导体有限公司半导体发光芯片
    CN-105742469-AJuly 06, 2016深圳大道半导体有限公司半导体发光芯片